Sangster, A.G. and Parry, D.W. (1976) The ultrastructure and electron-probe microassay of silicon deposits in the endodermis of the seminal roots of Sorghum bicolor (L.) Moench. Annals of Botany, 40 (167). pp. 447-459.
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Abstract
Si deposits in the endodermis of the seminal roots of sorghum following culture in nutrient solution containing 100 ppm SiO2 for 7 days were investigated by transmission electron microscopy. Si microassay was carried out by means of the EMMA-4 system. Endodermal ultrastructure is discussed. Electron micrographs of the Si deposits provided information on formative processes and indicated a considerable involvement with the cellulosic structure of the inner tangential wall. The initial deposits were believed to be composed structurally of particles designated as primary spherical units. The EMMA-4 conclusively indicated that Si was localized and confined to the inner tangential wall; implications of this result for previous studies are discussed. Tentative mechanisms for silicic acid transport and subsequent Si deposition on the inner tangential wall were proposed
| Item Type: | Article |
|---|---|
| Author Affiliation: | School of Plant Biology, University College of North Wales, Bangor, Gwynedd LL57 2UW, UK |
| Subjects: | Plant Production > Croping Systems |
| Divisions: | Sorghum |
| Depositing User: | Ms K Syamalamba |
| Date Deposited: | 29 Aug 2012 07:46 |
| Last Modified: | 29 Aug 2012 07:47 |
| URI: | http://eprints.icrisat.ac.in/id/eprint/7578 |
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