Flores, R.A. and Arruda, E.M. and Damin, V. and Junior, J.P.S. and etl, . (2018) Physiological quality and dry mass production of Sorghum bicolor following silicon (Si) foliar application. Australian Journal of Crop Science, 12 (4). pp. 631-638.
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Abstract
The forthcoming of silicon (Si) highly soluble sources provided a suitable alternative to Si use in agroecosystems. There are many benefits associated to Si application in crops, such as improvement in feed quality. In this sense, the aim of this work was to evaluate the effect of Si foliar application on physiological quality, biomass production, and silicon accumulation in Sorghum bicolor. The experiment was conducted under greenhouse condition using an entirely randomized design, with five Si rates (0 as control), 0.84, 1.68, 2.52, and 3.36g L-1 of Si) applied as potassium and sodium silicate, with four repetitions. In each treatment, applied solutions were balanced in potassium in order to isolate the Si effect. The following measurements were taken: growth, biomass production, Si accumulation, and physiological quality. Supplying Si via leaves did not affect the sorghum growth rate and the relative chlorophyll index; however, leaf area increased 23% with the use of 2.36 g L-1 of Si. Physiological variables are influenced by increasing Si rates, with rates close to 1.68 g L-1 of Si causing the best photosynthetic rates and stomatal conductance. The use of potassium silicate as a source of silicon is an alternative for productivity increases up to 30%, but an economic study on the viability of its commercial application in the production chain of Sorghum bicolor is necessary.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Silicon fertilization; beneficial element; mineral plant nutrition; photosynthesis; stomata conductance; relative chlorophyll index; transpiration. |
| Author Affiliation: | Soil Sector, Agronomy School, Federal University of Goiás, Goiânia, Brazil |
| Subjects: | Plant Production |
| Divisions: | Sorghum |
| Depositing User: | Mr T L Gautham |
| Date Deposited: | 03 Aug 2018 05:51 |
| Last Modified: | 03 Aug 2018 05:51 |
| URI: | http://eprints.icrisat.ac.in/id/eprint/15515 |
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